A 40μm pitch involves a 25μm copper pillar in size with 15μm spacing. Going forward, the industry can scale the bump pitch possibly at or near 20μm. Then, the industry needs a new interconnect ...

Copper-copper bonding is emerging as a pivotal technology in three-dimensional integration, offering a viable pathway towards overcoming the limitations of traditional interconnect methods.

Using NC copper for direct Cu–Cu bonding is a promising technology for advanced electronic packaging. However, it faces two key challenges. First, it contains many grain boundaries where ...

Program will enable smaller footprint in phased array, communication and electronic warfare systemsGREENSBORO, N.C., May 20, 2020 (GLOBE NEWSWIR ...

Several studies on the corrosion of copper wire bonding; however, there is no considerable study in the integrated factors leading to corrosion. Therefore, this paper focuses on investigating the ...

Establishing an advanced bonding technique for tungsten and copper alloys Success in fabricating a small-scale divertor mock-up with excellent heat removal capability Peer-Reviewed Publication ...

This time, in order to meet these requirements simultaneously, the research group used the filler material BNi-6 (Ni-11%P) and the oxide dispersion strengthened copper alloy (ODS-Cu), GlidCop ...

GREENSBORO – Semiconductor firm Qorvo has won a new contract with the U.S. Department of Defense (DoD). The aim: to further advance the development of copper-pillar-on-GaN flip-chip technology ...

PARIS — SEMI completed a survey on behalf the World Gold Council to gain insight into current attitudes regarding the use of gold bonding wire versus copper bonding wire. The global survey shows that ...

Bonding layer is locally deformed.(b) Representative stress-strain curve (red lines) of the toughened bonding layer. Obvious yield point can be confirmed in point (1). The dashed line in green is an ...