Semiconductor Engineering4h
Experimental Characterization Results and State-of-the-Art Device-Level Studies of DRAM Read Disturbance
A new technical paper titled “Revisiting DRAM Read Disturbance: Identifying Inconsistencies Between Experimental ...
Yahoo Finance1mon
Applied Materials Before Q1 Earnings: How to Play the Stock?
Its strong capabilities in logic and solid position in DRAM patterning are likely to have acted as boons. Its patterning systems and technologies, which are designed to address the shrinking ...
Design-Reuse3y
Module Threading Technique to Improve DRAM Power and Performance
This table shows the DQ bandwidth loss due to tRRD and tFAW restrictions for different speed grades of DDR3 using datasheet specified standard IDD7 patterns. The total losses are in the range of 25% ...
Nasdaq1mon
Breakthrough EUV Dry Photoresist Technology from Lam Research Adopted by Leading Memory Manufacturer
"We are proud to collaborate with industry leaders to accelerate this DRAM patterning innovation into high-volume manufacturing." The memory manufacturer will employ the Aether® tools in its most ...
Hosted on MSN15d
Micron’s cautious EUV strategy raises questions on future DRAM edge
Its recently shipped D1c DRAM prototype uses only one EUV layer, relying heavily on ArFi-based multi-patterning. However, industry analysts warn that as chip designs become more advanced ...
New Electronics28d
First test results obtained on 20nm pitch metal line structure
The e-test results confirmed the capability of the High NA EUV lithography scanner and its surrounding ecosystem to pattern lines/spaces at such a small dimension. Last year imec was the first to ...