Coulomb blockage could hold the key to radical memory designs that could pack 100,000 times more memory than is possible today into a given space Researchers create single electron memory cells ...

A technical paper titled “In situ electrical property quantification of memory devices by modulated electron microscopy” was published by researchers at Hitachi High-Tech Corporation, KIOXIA ...

Samsung has used advanced computer modeling to accelerate the development of Selector-Only Memory (SOM), a new memory technology that combines non-volatility with DRAM-like read/write speeds and ...

Kioxia Corporation today announced the development of the world’s first[1] three-dimensional (3D) semicircular split-gate flash memory cell structure ...

Datacenter Trends. Micron Ships First Quad-Level Cell NAND SSD . The release aims to meet the greater cloud storage demands of AI, Big Data and business intelligence workloads.

Micron's 5200 Series SATA SSD rollout continues with the upcoming launch of its 5210 Ion drive. Unlike the Eco, Pro, and Max models, this Ion-class drive relies on Micron's foul-level cell NAND ...

Intel’s Optane Memory H10 SSD is one of those enigmas of PC hardware that can drive reviewers crazy. It is—simply put—a storage technology that is more responsive in some cases, but slower ...

This might change, as InnoGrit, a maker of SSD controllers, demonstrated a reference design PCIe 5.0 SSD based on XL-Flash memory at Computex that delivers up to an incredible 3.5 million random ...

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