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'Holy grail for memory tech': New candidate for universal memory emerges in race to replace RAM and NAND — and this one doesn't use a toxic compoundUnlike flash memory, which uses a highly resistive oxide barrier to retain charge, ULTRARAM uses atomically thin layers of InAs/AlSb to create a "triple-barrier resonant-tunneling" (TBRT ...
Writing data to a NAND Flash memory cell involves a process called Fowler-Nordheim tunneling. A high voltage is applied to the control gate, causing electrons to tunnel through the oxide layer and ...
In a tunnel junction, the insulating barrier acts as the ... and scalability compared to conventional memory technologies like DRAM and flash. SIS junctions are used in superconducting qubits, which ...
Flash memory is non-volatile, stable enough for long term bulk storage ... To overcome imprinting, the peak field needed for successful switching increases. Ferroelectric tunnel junctions A second ...
NeoFuse is a logic-process compatible non-volatile memory (logic-NVM) using impedance change for ... The main conducting mechanism is quantum tunneling in the ultra-thin gate oxide. Classic mechanics ...
SuperFlash® is SST’s patented and proprietary NOR flash technology. With 80B+ devices shipped, SuperFlash is the non-volatile memory of choice for embedded ... on a split-gate cell design and thick ...
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