Cambridge GaN Devices’s hybrid architecture for power modules combines gallium-nitride and IGBT devices to give EV designers ...

Infineon is developing TRENCHSTOP H7 IGBTs in a DTO247 package, which is twice the size of a standard TO247. A single ...

It is “a design that can be used to compare the real-life performance of various high power IGBT, 1st and 2nd generation SiC, GaN, mosfet and cascode switching technologies”, said the firm. “As the ...

Cambridge GaN Devices has patented a technique for lowering losses in 100kW+ IGBT-based vehicle traction drives, at lower cost than all-silicon-carbide inverters, it said. It involves connecting GaN ...