These features make them suited for three-phase inverter drive applications such as electronically commutated (EC) fans in AI ...

Silicon power electronic devices such as IGBTs and MOSFETs can also be controlled via the gate. Here less speed is required, e.g. 120 MHz arbitrary waveform generation is adequate. Therefore, it can ...

In power electronics, silicon carbide beats silicon in most of the metrics that count, except cost. Infineon is trying to tackle the problem with the first fusion power module for EVs. However ...

onsemi has introduced the SPM 31 intelligent power module (IPM), its first generation of 1200V silicon carbide (SiC) metal ...

V SiC MOSFET based SPM 31 IPMs. These IPMs deliver the highest energy efficiency and power density in the smallest form factor compared to utilising Field Stop 7 IGBT technology, resulting in lower ...