PSRAM comprises a DRAM memory cell, which has one transistor and one capacitor per cell. This design enables PSRAM to achieve a lower cost per bit. It also integrates a refresh-control circuit.

Memory design does not follow the same rules as logic. “The SRAM bit-cell typically utilizes smaller than minimum size transistors in order to realize higher density,” says Hingarh. While this is ...

It uses a small cell size (4 λ 2) and can stack up to eight layers for a high chip bit density. The cells don't require any standby power or any refresh cycles, but polymer memory isn't a fast ...

Design Memory Designline Blog. Memory lane: Where SOT-MRAM technology stands in 2024. January 22, 2024 by Majeed Ahmad ... Next, SOT-MRAM bit cells can potentially be made much smaller than SRAM cells ...

A longer bit line links more SRAM cells and means the memory needs fewer peripheral circuits, shrinking the overall area. “Typically, the bit line has been stuck at 256 bits for a while,” says ...

The antifuse memory's design can be as small as one transistor using technology such as Sidense's 1T-Fuse memory IP. ... (MTP) memories. The small bit cell size results in a smaller memory array ...

Around 2015, the answer came from a new type of non-volatile memory technology, called 3D XPoint, with phase-change memory (PCM) cells arranged at the ‘cross points’ of word and bit lines. PCM memory ...

In-memory compute refers to the many varied attempts over more than a decade to meld computation into the memory bit cells or memory macros used in SoC design. Almost all of these employ some flavor ...

Samsung is focusing on the latter, announcing the mass production of its 10 nanometer 128-gigabit three-bit multi-level-cell NAND flash. That mouthful translates into flash chips with more memory ...