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In the decade since the discovery of Rowhammer, GPUhammer is the first variant to flip bits inside discrete GPUs and the ...
Flash memory has deeply penetrated consumer goods with its rising densities and falling price/bit. But new technologies will try to replace it.
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Intel, Synopsys, TSMC All Unveil Record Memory Densities - MSNA longer bit line links more SRAM cells and means the memory needs fewer peripheral circuits, shrinking the overall area.
Two-bit/cell technology effectively allows the capacity of the silicon memory array to be doubled, leading to a significant reduction in the die size and the package.
Spansion, the memory products manufacturer, has demonstrated four-bit-per-cell Flash memory for the first time.
Like SRAMs, SOT-MRAM offers a high switching speed in the sub-ns regime and promises robust endurance. Additionally, being non-volatile, SOT-MRAM bit cells achieve lower standby power than SRAMs at ...
Infineon’s Sharma suggested a few other approaches to dealing with increasing bit-cell unreliability. “ [Further techniques include] introducing bit flipping/interleaving in the array design and ...
Do all our cells have a type of memory, and if so, how might this influence health? We investigate. Design by MNT; Photography by Grant Faint/Getty Images & Ed Reschke/Getty Images.
A new technique mimics the normal reprogramming process in early embryonic development to essentially wipe a cell’s memory, making it similar to a stem cell.
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