“This research shows that sub-5-nanometer gates should not be discounted. Industry has been squeezing every last bit of capability out of silicon. By changing the material from silicon to MoS2, we can ...

Motorola develops a dual-gate transistor in which the two gates can switch on and off independently--a twist the company says could increase performance and reduce power consumption.

A technical paper titled “Analysis of Logic-in-Memory Full Adder Circuit With Floating Gate Field Effect Transistor (FGFET)” was published by researchers at Konkuk University, Korea National ...

Hu’s group has been working on circuit-simulation tools for the tri-gate transistors for the past five years. Still, circuit designers see new opportunities that could open up with these ...

KYOTO, Japan — At the VLSI Symposium here on Thursday (June 12), Advanced Micro Devices Inc. will present more details on what it calls the world's fastest transistor technology. In April, AMD leaked ...

“Indium oxide contains oxygen-vacancy defects, which facilitate carrier scattering and thus lower device stability,” says ...

F. Hattori, Y. Yanagisawa, J. Imaoka and M. Yamamoto, “Gate Drive Circuit Suitable for a GaN Gate Injection Transistor,” in IEEE Access, doi: 10.1109/ACCESS.2023.3270261. Related Reading GaN Power ...

In this lesson, students build two circuits and explore how transistors function. When Bell Labs introduced the transistor in June of 1948, a spokesman proudly announced "This cylindrical object ...