II. 7 Transistor SRAM Cell Scheme. Figs. 2 and 3 show the circuit diagram and the operation waveform of the proposed cell scheme, respectively. The salient feature of the scheme is an additional nMOS ...

Demonstrated Operation of Large-Capacity SRAM with the World's Highest Level of Bit-density at 40nm node. TOKYO, Japan, July 13, 2010--Renesas Electronics Corporation (TSE: 6723) today announced the ...

The SRAM cell achieves excellent static-noise margin of 240mV at 1.0V operation and shows good functionality down to 0.4V with a symmetric butterfly curve. Further, the cell shows great potential ...