STMicroelectronics and Innoscience have signed a joint development agreement (JDA) to develop and manufacture gallium nitride on silicon (GaN-on-Si). Under the terms of the agreement, Innoscience will ...

The results highlight silicon nitride’s superior biomechanical performance, particularly in reducing implant subsidence, improving load distribution, and enhancing spinal stability. Key Commercial ...

Type-I heterojunctions are commonly formed using materials like gallium nitride (GaN ... band structure and carrier mobility of the semiconductors can be modulated, leading to enhanced device ...