News

EE World Online2d
100 V 1.5 mΩ GaN transistor features built-in Schottky diode in 3 x 5 mm package
Infineon Technologies AG has introduced the world’s first gallium nitride (GaN) power transistors with integrated Schottky ...
Electronics Weekly3d
100V GaN transistor will integrate Schottky diode for hard switching
For hard-switched power topologies, Infineon is planning a 100V GaN transistors with a integrated Schottky diode. "Due to the ...
RF Globalnet18d
Ampleon Unveils New 800 W Extremely Rugged ART LDMOS RF Power Transistors For Industrial, Scientific, And Medical Applications
Ampleon announces the release of its latest high-power RF transistor, the ART800PE(G), built on the company’s Advanced Rugged Technology (ART). Designed to withstand the harshest operating conditions, ...