By this point, the distance between the source and drain had been reduced so ... which gives better control than the planar ...

These are analogous to the terminals on a bipolar transistor, in that the source fulfills a similar role to the emitter, the gate to the base, and the drain to the collector. Thus the three basic ...

A type of 3D FinFET transistor from Intel introduced in 2011 with its Ivy Bridge microarchitecture. The Tri-Gate design is considered 3D because the gate wraps around a raised source-to-drain ...

The exterior layers of the transistor are known as the "drain" and "source," with the central layer being referred to as the "gate". The function of the transistor is to utilize the voltage applied to ...

The most important parameters are drain-source maximum current ... wired between gate and source. Unlike with BJT transistors that need a constant current flow, you only need to charge a gate ...

Each transistor has a source, a gate and a drain, which allow the transistor to function as a switch. The gate is how a transistor controls the flow of current between the source and drain ...

A layered transistor design combines light detection optical memory and neuromorphic processing in one unit offering compact ...

Until earlier this decade, the scaling and performance trends of the logic transistor were mainly the result of SiO 2 gate oxide scaling as well as source–drain junction and well engineering.

MOS transistor is a 4-terminal device having terminal drains, source, gate and body (substrate). Figure 1 shows the 3-dimentional structure of NMOS. The NMOS transistor is formed on a p-type silicon ...

A chip incorporates a multitude of transistors. A transistor, which acts like a switch in a device, consists of a source, gate, and drain. In operation, current flows from the source to a drain, and ...

Innoscience Technology has launched a 100V bi-directional GaN-on-silicon bi-directional transistor, intended to replace ... Called INV100FQ030A, it has two drains, a gate, and no source connection.

The gate dielectric is a very thin insulation layer, traditionally made of silicon dioxide, that lies between the transistor's metal gate electrode and the channel through which the current flows.