The biggest challenges in developing transistor technologies for 16-nm generation and beyond are to reduce the parasitic resistance around the source–drain junction in silicon semiconductors to which ...

Gate-All-Around Transistors: In a new design, the transistor channel is made up of an array of vertical nanowires. The gate surrounds all the nanowires, which improves its ability to control the flow ...

The next stage in the transistor evolution was the FinFET, which became commercialized in the first half of the 2010s and grew into dominance at 16nm and below. In a FinFET design, the gate is wrapped ...

It would be unwise to doubt Samsung's ability to continue on this density path. It aggressively scaled sense amp transistor gate lengths from 0.22µm to 0.12µm in the move from 80 nm to 68 nm. With the ...

Two research projects into novel transistor structures at the Advanced Technology Institute at the University of Surrey have extended the range of processes that might be able to produce ...

FinFET employs a vertical channel with a lateral current flow from drain to source (Fig. 2).The architecture effectively increases the width of the gate to boost drive current per unit area when ...

Like all transistors, MOSFETs have three electrodes. When a MOSFET is switched on, current flows in one electrode (the source), through the N-P-N layers, and out another electrode (the drain).

As you may know, a transistor consists of more than just a channel (the molecule) and the gate (the hexagon of atoms). There also needs to be a source and a drain. The drain is the indium arsenide ...

The breakthrough is inspired from the gate-all-around field-effect transistor (GAAFET) structure, where the gate i s en circled entirely by the transistor source, as opposed to being half ...

Shrinking silicon transistors have reached their physical limits, but a team from the University of Tokyo is rewriting the rules. They've created a cutting-edge transistor using gallium-doped ...