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The insulated gate bipolar transistor (IGBT) refers to a three-terminal semiconductor switching device used in a variety of electronic devices for fast switching with high efficiency.

The fun part about logic gates is that there are so many ways to make them, with each approach having its own advantages and disadvantages. Although these days transistor-transistor logic (TTL) is … ...

Peking University transistor could outperform Intel, TSMC, and Samsung’s top silicon chips Full gate coverage boosts speed and cuts energy use in breakthrough Chinese transistor design China may ...

Until 2018, DRAM peripheral transistors were predominantly made in planar logic MOSFET technology with poly-Si/SiO 2 or poly-Si/SiON gates. These technologies were less advanced than the transistors ...

Marvell Technology MRVL uses advanced CMOS technologies at 5nm and 3nm nodes and is now shifting toward 2nm and below, which ...

Gate-all-around transistors use stacked nanosheets. These separate horizontal sheets are vertically stacked so that the gate surrounds the channel on all four sides, further reducing leakage and ...

Furthermore, the insulated gate bipolar transistor [IGBT] is being widely adopted in high-scale renewable systems, such as solar photovoltaic installations, hydroelectricity, and wind turbines.

The world is heading into the age of gate-all-around (GAA) or nanosheet transistors. While it was never going to save Moore’s Law by itself, the new device is opening the door to continuous ...

It's time to dig inside to understand how the internal CPU components are designed. We'll discuss transistors, logic gates, power and clock delivery, design synthesis, and verification.

Ready for some hardcore science about transistor elements that are a fraction of the width of a human hair? Good, because that's what this post is all about. "The semiconductor industry has long ...