Threshold voltage and channel mobility of a 1.2-kV planar-channel SiC MOSFET at high junction temperature (Ti) up to 700 °C have been extracted and analyzed for the first time, by virtue of a ...

This paper introduces the simulation of the MOSFET common-source amplifier circuit, and provides a method to jointly solve the physical model of the device and the external circuit to simulate the ...

Rohm has developed a 30V N-channel MOSFET in a common-source configuration that achieves an industry-leading ON-resistance of ...

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To help you with the same, Circuit Digest provides you with a large collection of free IoT projects for you to learn and recreate. The projects are built using the popular development platforms like ...