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How to put the pieces together in a complex design with AI is an unsolved problem.

Abstract: We demonstrate a 1MBit array of 1-Transistor-8-Resistive RAM (1T8R) memory fabricated using a foundry logic technology. Using a gradual SET/RESET programming scheme, sixteen conductance ...

Abstract: Commercially available normally-off GaN power high-electron-mobility transistor (HEMT) devices have typically adopted a p-GaN gate structure. In the gate region, there exist a Schottky ...

† ‡ † Center for Integrated Nanostructure Physics (CINAP), Institute for Basic Science (IBS), and ‡ Department of Energy Science, Department of Physics, Sungkyunkwan University, Suwon 440-746, ...

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In the present work, nanocellulose-gated indium tin oxide neuromorphic transistors are fabricated. The device exhibits good electrical performance. Short-term synaptic plasticities were mimicked, ...