Shrinking silicon transistors have reached their physical limits, but a team from the University of Tokyo is rewriting the ...

The NP12-1B technology provides 28-volt operation with superior linearity, power density and efficiency for demanding high-power applications across K-Band to V-Band frequencies ...

The insulated gate bipolar transistors market is expected to grow significantly between 2025 and 2035 as a result of the ...

Transistors are fundamental to microchips and modern electronics. Invented by Bardeen and Brattain in 1947, their development ...

Abstract: Source-gated transistors (SGTs) are three-terminal devices in which the current is controlled by a potential barrier at the source. The gate voltage is used primarily ... saturation voltage ...

The results demonstrate that at high pressures the grain boundaries and at low pressures the polysilicon-SiO/sub 2/ interface roughness scattering are the main factors in determining the transistor ...

In the realm of electronic devices, particularly in the domain of memory devices, significant research has centered around non-volatile floating gate transistors ... Park Systems Corp.) at room ...