Cambridge GaN Devices has patented a technique for lowering losses in 100kW+ IGBT-based vehicle traction drives, at lower cost than all-silicon-carbide ...
Infineon said this enables easy re-design from full-IGBT or full-SiC systems to what it calls “fusion” or “hybrid” inverters that put both power switching technologies in one device ...
V SiC MOSFET based SPM 31 IPMs. These IPMs deliver the highest energy efficiency and power density in the smallest form factor compared to utilising Field Stop 7 IGBT technology, resulting in lower ...
Combo ICeGaN combines smart ICeGaN HEMT ICs and IGBTs in the same module or IPM, maximising efficiency and offering a cost-effective alternative to expensive SiC solutions. Giorgia Longobardi, founder ...
New-Generation Products Highlight Company’s Increased Focus on Power Optimized conduction and switching losses to enhance system efficiency A diverse range of IGBT products to meet the evolving ...
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