NMOS devices exercise a highly tensile silicon nitride capping layer to induce tensile strain in the NMOS channel region. High NMOS drive currents of 1.26mA//spl mu/m (high VT) and 1.45mA//spl mu/m ...

Abstract: Chiplet-based packaging technology integrates multiple heterogeneous dies with different functions and materials into a single system as a LEGO-based approach using advanced packaging ...

To this end, we synthesized silicone (polydimethylsiloxane; PDMS) foam disks resulting in a low cost (0.02$/disk) and ultraclean material suitable for analysis by gas or liquid chromatography ...