SanDisk describes HBF as stacking up to 16 layers of BiCS 3D NAND with through-silicon vias (TSVs). A logic layer enables ...

This hybrid creation stacks up a whopping 16 layers of SanDisk's latest 3D NAND dies using tiny data pipelines called through-silicon vias. There's also a special ...

Standard NAND flash storage is used in microSD cards, USB drives, and solid-state drives in computers and phones. To fit more gigabytes into smaller spaces, manufacturers ...

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NANDFCTRL2 is a VHDL IP core implementing an interface to NAND flash memory devices. The core supports ONFI 4.0 and provides DMA transfers to and from the memory. The core implements a BCH EDAC ...

sureCore’s EverOn™ Single Port Synchronous Ultra Low Voltage SRAM IP combines high-density foundry bitcells with sureCore’s low-voltage and low-power peripheral circuits, resulting in a memory that ...

While MRAM is not yet able to compete with the high-density storage solutions of NAND Flash or DRAM, it has made significant inroads in industries like data logging, where NOR Flash and SRAM is ...

Samsung Electronics has reportedly delayed the development of its 10nm sixth-generation 1c DRAM to June 2025. Initially slated for completion by late 2024, the timeline has been pushed back by six ...

Images posted on the popular WeightWeenies forum today show that a new SRAM Force AXS groupset is on the way, or at the very least in development. Images have surfaced that point to a radical ...

Recently, South Korean testing equipment provider Nextin is reportedly in discussions to supply testing equipment to Japanese NAND Flash manufacturer Kioxia. If the negotiations work out ...

A new technical paper titled “Novel Trade-offs in 5 nm FinFET SRAM Arrays at Extremely Low Temperatures” was published by researchers at University of Stuttgart, IIT Kanpur, National Yang Ming Chiao ...