Abstract: Commercially available normally-off GaN power high-electron-mobility transistor (HEMT) devices have typically adopted a p-GaN gate structure. In the gate region, there exist a Schottky ...

Microwaves can control a single quantum bit more precisely than ever before, creating a device similar to a quantum ...

The base currents of both the npn and pnp SiGe HBTs degrade with increasing proton fluence, as expected, although in general more strongly for the npn transistors than for the pnp transistors, ...

Materials Research Institute and School of Physics and Astronomy, Queen Mary University of London, Mile End Road, E1 4NS London, U.K. Materials Research Institute and School of Physics and Astronomy, ...