SemiQ Inc. has announced its third-generation QSiC 1200V MOSFET, a silicon carbide device engineered for high-voltage ...

SemiQ, a supplier of silicon carbide solutions for high performance applications, presents the new QSiC 1200V MOSFET.

The chip can sense the on-resistance (RDS(on))—the resistance between the drain and source when the power MOSFET is turned on—and DC resistance (DCR) to balance out the current between these ...

SEMIQ QSiC 1200V MOSFET third-generation SiC device shrinks the die size while improving switching speeds and efficiency.

You can use similar part numbers, however the key is to use a MOSFET with a low drain to source resistance, Rds(ON). In the case of AO4294A, Rds(ON) is around 10mR (Figure 5). Figure 5: The ...

With over twenty years of expertise in silicon carbide development, Infineon adopted a trench-based design to capitalize on the low RDS(on) characteristics of ... The CoolSiC™ MOSFET trench concept is ...

Holistic efficiency improvements enable reduced system costs and development time while maximizing application lifetime, representing a pivotal progression for silicon carbide technology Wolfspeed ...

NYSE:WOLF) Wolfspeed Launches New Gen 4 MOSFET Technology Platform to Deliver Breakthrough Performance in Real-World ...

DURHAM, N.C.--(BUSINESS WIRE)--Wolfspeed, Inc. (NYSE: WOLF), the global leader in silicon carbide technology, today introduced its new Gen 4 technology platform, which enables design rooted in ...