Abstract: Commercially available normally-off GaN power high-electron-mobility transistor (HEMT) devices have typically adopted a p-GaN gate structure. In the gate region, there exist a Schottky ...

Recent technological advances have enabled the development of a wide range of increasingly sophisticated wearable and ...

This is how design engineers can develop tamper detection circuits for their products utilizing switches and sensors.

Designing a circuit to switch on a light at dusk and off at dawn is straightforward, and many such designs have been featured ...

Abstract: We demonstrate a HfZrO 2 (HZO) ferroelectric field-effect transistor fabricated on a silicon-on-insulator substrate, targeting MHz synaptic device applications. Stable multistate weights ...

How to Make Powerful Music Reactive LED Strip Circuit ...

In simple terms, amplitude is how strong or intense a wave is. It's plotted on a graph with time on the x-axis and amplitude ...

Researchers have discovered a new class of materials -- called intercrystals -- with unique electronic properties that could power future technologies. Intercrystals exhibit newly discovered forms of ...

More information: Anuradhi Rajapaksha et al, Ebers–Moll model inspired equivalent circuit for quantum thermal transistors, APL Quantum (2025). DOI: 10.1063/5.0270456 Anuradhi Rajapaksha earned ...

A research team led ... circuits and even wearable electronics because of low processing temperatures below 300°C," said Professor Yong-Young Noh. More information: Youjin Reo et al, Vapour-deposited ...