By dumping silicon for indium-oxide, researchers have made tiny transistors that outperform devices previously made.

Reduced substrate resistances and field degraded vertical transistor gains seem to be the reasons for high latch-up immunity of the butted layout. Latch-up free bulk CMOS ICs can be fabricated using ...

Recent technological advances have enabled the development of a wide range of increasingly sophisticated wearable and ...

Transistors are the unsung heroes behind every modern computer, smartphone, and digital devicebut how did these tiny pieces of silicon teach machines to “think”? In this video, we explore the ...

Semiconductors are the foundation of electronic and Internet of Things (IoT) devices and telecommunication equipment. They ...

These circuits do not show the GB degradation that characterizes other low-voltage approaches based on floating-gate transistors. The proposed approach is validated with experimental results of a CMOS ...

laying a foundational framework that parallels the success of classical transistor models in electronics. By enabling clearer visualization, simulation, and design of quantum thermal circuits ...

Zhejiang Key Laboratory of 3D Micro/Nano Fabrication and Characterization, School of Engineering, Westlake University, Hangzhou, Zhejiang 310030, China ...

Department of Electronics and Communication Engineering, Jaypee Institute of Information Technology, Sector-128, Noida 201304, Uttar Pradesh, India ...

School of Electronic Science & Applied Physics, Hefei University of Technology, 193 Tunxi Road, Hefei, Anhui 230009, P. R. China ...