Abstract: Commercially available normally-off GaN power high-electron-mobility transistor (HEMT) devices have typically adopted a p-GaN gate structure. In the gate region, there exist a Schottky ...

In the present work, nanocellulose-gated indium tin oxide neuromorphic transistors are fabricated. The device exhibits good electrical performance. Short-term synaptic plasticities were mimicked, ...

To celebrate the 93rd birthday of famed industrial designer Dieter Rams, you can watch Gary Hustwit's fascinating documentary Rams for free. Even if you don't know his name, you likely know of his ...

The team developed a two-dimensional transistor using bismuth oxyselenide. The team’s transistor has Gate-all-around technology, the latest field-effect transistor technology. It replaces FinFET.

Our Leadership Principles aren’t just corporate jargon hanging on office walls. These 16 guiding principles form the backbone of every decision, project, and hire at Amazon. While at Amazon, I’ve seen ...

“But Harvard will not surrender its core, legally-protected principles out of fear of unfounded retaliation by the federal government.” US government to have control in Nippon Steel-U.S. Steel deal, ...

This work studies the intersystem Coulomb interactions in IL-functionalized InSe field-effect transistors by displacement current measurements. We uncover a strong self-gating effect that yields a ...

This may be the reason why Federal CIO Greg Barbaccia sent out his 16 principles of what it takes to be an agency CIO earlier this week. Learn how high-impact service providers have helped the ...

Abstract: Velocity overshoot in heterojunction bipolar transistors has long been recognized to significantly reduce collector signal delay below that predicted under the assumption of a constant ...