Abstract: Commercially available normally-off GaN power high-electron-mobility transistor (HEMT) devices have typically adopted a p-GaN gate structure. In the gate region, there exist a Schottky ...

Recent technological advances have enabled the development of a wide range of increasingly sophisticated wearable and ...

Microwaves can control a single quantum bit more precisely than ever before, creating a device similar to a quantum ...

But conventional SRAM-based TCAM circuits are usually implemented with 16 CMOS transistors, which limits storage capacity of TCAMs to tens of Mbs in standard memory structures, and takes up valuable ...

More information: Anuradhi Rajapaksha et al, Ebers–Moll model inspired equivalent circuit for quantum thermal transistors, APL Quantum (2025). DOI: 10.1063/5.0270456 Anuradhi Rajapaksha earned ...

Zhejiang Key Laboratory of 3D Micro/Nano Fabrication and Characterization, School of Engineering, Westlake University, Hangzhou, Zhejiang 310030, China ...

Department of Electronics and Communication Engineering, Jaypee Institute of Information Technology, Sector-128, Noida 201304, Uttar Pradesh, India ...

Abstract: A novel configuration for an absolute-value circuit (full-wave rectifier with zero threshold) using two matched junction field-effect transistors is proposed and experimentally demonstrated.

vertically stacked integrated circuits and even wearable electronics because of low processing temperatures below 300°C," said Professor Yong-Young Noh. More information: Youjin Reo et al, ...