Unlike flash memory, which uses a highly resistive oxide barrier to retain charge, ULTRARAM uses atomically thin layers of InAs/AlSb to create a "triple-barrier resonant-tunneling" (TBRT ...

Writing data to a NAND Flash memory cell involves a process called Fowler-Nordheim tunneling. A high voltage is applied to the control gate, causing electrons to tunnel through the oxide layer and ...

In a tunnel junction, the insulating barrier acts as the ... and scalability compared to conventional memory technologies like DRAM and flash. SIS junctions are used in superconducting qubits, which ...

The narrow, deep holes required for one type of flash memory are made twice as fast with the right recipe, which includes a plasma made from hydrogen fluoride.

To improve data storage, researchers are perfecting 3D NAND flash memory, which stacks cells to maximize space. Researchers ...

Flash memory is non-volatile, stable enough for long term bulk storage ... To overcome imprinting, the peak field needed for successful switching increases. Ferroelectric tunnel junctions A second ...

NAND Flash memory achieves non-volatile storage ... “We have realized the world’s smallest magnetic tunnel junction, which is as small as 3 nanometres across,” Fukami says.

SuperFlash® is SST’s patented and proprietary NOR flash technology. With 80B+ devices shipped, SuperFlash is the non-volatile memory of choice for embedded ... on a split-gate cell design and thick ...