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'Holy grail for memory tech': New candidate for universal memory emerges in race to replace RAM and NAND — and this one doesn't use a toxic compound
Unlike flash memory, which uses a highly resistive oxide barrier to retain charge, ULTRARAM uses atomically thin layers of InAs/AlSb to create a "triple-barrier resonant-tunneling" (TBRT ...
Nanowerk9mon
NAND Flash: The Backbone of Modern Data Storage
Writing data to a NAND Flash memory cell involves a process called Fowler-Nordheim tunneling. A high voltage is applied to the control gate, causing electrons to tunnel through the oxide layer and ...
TechRadar7d
Flash memory breakthrough could help supercharge NAND production for SSD, memory cards - but does it actually matter?
3D NAND flash memory is different from traditional single-layer NAND because it vertically stacks memory cells to cram more storage into smaller spaces. The process involves carving precise ...
Nanowerk9mon
Tunnel Junction: Quantum Tunneling for Nanoelectronics and Spintronics
In a tunnel junction, the insulating barrier acts as the ... and scalability compared to conventional memory technologies like DRAM and flash. SIS junctions are used in superconducting qubits, which ...
Nature2y
Spintronics enters the mainstream
NAND Flash memory achieves non-volatile storage ... “We have realized the world’s smallest magnetic tunnel junction, which is as small as 3 nanometres across,” Fukami says.
Design-Reuse6y
The SST SuperFlash® IP is an embedded CMOS Flash memory IP with sector/chip Erase and byte Program capability.
SuperFlash® is SST’s patented and proprietary NOR flash technology. With 80B+ devices shipped, SuperFlash is the non-volatile memory of choice for embedded ... on a split-gate cell design and thick ...