Wide bandgap materials and advanced packaging are revolutionizing power, but thermal and integration challenges persist.

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Thermal challenges in 5G radios and the combination of passive and active thermal management techniques and hardware design ...

Abstract: This article presents a wideband front-end module (FEM ... gallium nitride (GaN) high-electron-mobility transistor (HEMT) process. The TX branch achieves a small-signal gain greater than 17 ...

While USB-C chargers and adapters have been the forerunners, GaN is now on its way to reaching tipping points in its adoption ...

BluGlass, a company pioneering lasers for the quantum, defence, and biotech markets, has filed three US patent applications ...

Based on a new manufacturing process, the split-gate MOSFETs developed by Renesas show significant improvements in power ...

Nubia’s Red Magic has introduced a special edition of its 150W GaN charger, themed around the popular game Three Kingdoms 8.

Infineon Technologies has launched isolated gate drivers for the latest hybrid IGBT and SiC inverter modules in electric ...

However, over the past year, I have undertaken extensive testing, evaluating close to 300 GaN (gallium nitride) chargers of varying sizes, power outputs, and manufacturers. Also: This portable ...

Toshiba Electronics has introduced a 60V 1A single-contact photo-relay in a 2.6 x 7mm 4pad SO4 package. Called TLP3640A, it can switch 60Vdc or 60Vac peak, with a typical on-resistance of 0.14Ω and ...

Is there a future for digital twins in the power electronics industry? Continued refinement of the technology is paving a ...