Semiconductor Engineering1d
Improving GaN Device Architectures
GaN is especially well-established in low-power applications like chargers for personal electronics, while silicon and SiC ...
Electronic Products9d
Solving power challenges in AI data centers
Power electronics for AI data centers are rapidly advancing to meet increasingly complex workloads while improving energy ...
Semiconductor Engineering1d
Electrifying Everything: Power Moves Toward ICs
Wide bandgap materials and advanced packaging are revolutionizing power, but thermal and integration challenges persist.
Ortel Announces Wafer Fabrication Transfer to Canadian Photonics Fabrication Centre for Flagship C-Band, High-Power Continuous Wave Laser
Ortel, a Photonics Foundries enterprise, today announced the successful transfer of wafer fabrication for its C-Band, High-Power, Continuous Wave Laser Module platform to the Canadian Photonics ...
Electronic Design15d
“Auxless” GaN Flyback Converters Tackle AC-DC Adapter Design Challenges
For this type of power supply, GaN-based, auxiliary-less primary-side regulation eliminates ... TI has the UCG28826EVM-093 ...
Aehr Announces Initial FOX-XP Multi-wafer Test and Burn-in Production System Order from Major Gallium Nitride Power Semiconductor Supplier
Detailed price information for Aehr Test Systems (AEHR-Q) from The Globe and Mail including charting and trades.
Compoundsemiconductor.net3d
Narrow-linewidth DFB lasers extended to 405 and 488nm
This design enables a narrow linewidth (typically 20 MHz at 450 nm) and wavelength precision. Additionally, the lasers ...
Compoundsemiconductor.net3d
Narrow-linewidth DFB lasers now at 405 and 488nm
Building on recent achievements at an emission wavelength of 450 nm, Swiss company Exalos has announced narrow-linewidth DFB GaN-based laser diodes operating at 405 nm and 488 nm.