One significant advancement is the development of the silicon-on-insulator (SOI) lateral trench IGBT, which incorporates a self-biased pMOS structure. This design improves short-circuit properties ...

Mitsubishi announced that it has begun shipping samples of two new S1-Series high-voltage IGBT modules rated at 1.7 kV. These two components are useful for large industrial equipment, such as railcars ...