Electronics Weekly23d
APEC: small GaN transistors improve EV IGBT traction inverters
Cambridge GaN Devices has patented a technique for lowering losses in 100kW+ IGBT-based vehicle traction drives, at lower cost than all-silicon-carbide inverters, it said. It involves connecting GaN ...
Electronic Design28d
New Power Module Integrates SiC MOSFETs and IGBTs to Cut EV Costs
Infineon said this enables easy re-design from full-IGBT or full-SiC systems to what it calls “fusion” or “hybrid” inverters that put both power switching technologies in one device ...
Electronics Weekly7y
Half-bridge reference design allows IGBTs, GaN hemt, SiC mosfet and compound cascode switches to be compared
It is “a design that can be used to compare the real-life performance of various high power IGBT, 1st and 2nd generation SiC, GaN, mosfet and cascode switching technologies”, said the firm. “As the ...
CIE – Components in Electronics14d
CGD announces 100kW+ technology enabling GaN to address $10B+ EV inverter market
Cambridge GaN Devices (CGD), the fabless, clean-tech semiconductor company that develops energy-efficient GaN-based power devices that make greener ...
Electropages13d
SiC-based intelligent power modules reduce energy consumption and system cost
V SiC MOSFET based SPM 31 IPMs. These IPMs deliver the highest energy efficiency and power density in the smallest form factor compared to utilising Field Stop 7 IGBT technology, resulting in lower ...