By dumping silicon for indium-oxide, researchers have made tiny transistors that outperform devices previously made.

This paper investigates extremely low-power circuits based on new Si/SiGe heterojunction tunneling transistors (HETTs) that have a subthreshold swing of . Device characteristics, as determined through ...

More information: Anuradhi Rajapaksha et al, Ebers–Moll model inspired equivalent circuit for quantum thermal transistors, APL Quantum (2025). DOI: 10.1063/5.0270456 Anuradhi Rajapaksha earned ...

The WA government is ploughing ahead with its controversial $217 million plan to build a street motorsport circuit in Perth's Burswood Park, but don't dare call it a motorplex. That was the ...

Zhejiang Key Laboratory of 3D Micro/Nano Fabrication and Characterization, School of Engineering, Westlake University, Hangzhou, Zhejiang 310030, China ...

Abstract: A novel configuration for an absolute-value circuit (full-wave rectifier with zero threshold) using two matched junction field-effect transistors is proposed and experimentally demonstrated.