Boise State University researchers have unveiled a cutting-edge approach to manufacturing flexible hybrid circuits—reducing ...

Abstract: Commercially available normally-off GaN power high-electron-mobility transistor (HEMT) devices have typically adopted a p-GaN gate structure. In the gate region, there exist a Schottky ...

Recent technological advances have enabled the development of a wide range of increasingly sophisticated wearable and ...

This is how design engineers can develop tamper detection circuits for their products utilizing switches and sensors.

Abstract: We demonstrate a HfZrO 2 (HZO) ferroelectric field-effect transistor fabricated on a silicon-on-insulator substrate, targeting MHz synaptic device applications. Stable multistate weights ...

How to Make Powerful Music Reactive LED Strip Circuit ...