IRF610 www.vishay.com Vishay Siliconix S21-0819-Rev. C, 02-Aug-2021 4 Document Number: 91023 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE.

IRF610. Power MOSFET. General Information: General Information. Useful Web Links. Markings: Part Marking Information. TO-220, I2PAK (TO-262), D2PAK (TO-263) (High Voltage) Packaging Information: Package Information. TO-220AB (High Voltage) Reliability Data: …

IRF610 Product details Description These devices are n-channel, enhancement mode, power MOSFETs designed especially for high speed applications, such as switching power supplies, converters, AC and DC motor controls, relay and solenoid drivers and other pulse circuits.

IRF610, SiHF610 Vishay Siliconix FEATURES • Dynamic dV/dt Rating • Repetitive Avalanche Rated •Fas St wcthniig • Ease of Paralleling • Simple Drive Requirements • Compliant to RoHS Directive 2002/95/EC DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching,

IRF610 – N-Channel 200 V 3.3A (Tc) 36W (Tc) Through Hole TO-220AB from Vishay Siliconix. Pricing and Availability on millions of electronic components from Digi-Key Electronics.

Mar 9, 2025 · IRF610 Vishay / Siliconix MOSFETs RECOMMENDED ALT IRF6 datasheet, inventory, & pricing.

IRF610 Product details DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.

Description: N-Channel Power MOSFETs, 3.5A, 150-200V. 32 Results. Datasheet: 55Kb/7P. Manufacturer: Intersil Corporation.

accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible on-resistance i. any existing surface mount package. The D2PAK (TO-263) is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0 W in. A/μs, VDD VD. ISTA. E RA. ETER. SYMB. c.

This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation.