Thanks to the limited trapping effects and conductivity modulation, the vertical GaN PiN diode can deliver superior dynamic RON performance after switching from high-voltage OFF state, showing great potential for high-power and high-efficiency power conversion.

Oct 5, 2019 · We report vertical GaN-on-GaN PIN diodes with a record high figure-of-merit (VBR2 / Ron) of 29.7 GW/cm 2 on free-standing GaN wafer using a complementary metal-oxide-semiconductor (CMOS) compatible contact materials.

The new series of Gallium Nitride (GaN) PIN diode switches from Pasternack are Reflective designs. Our RF Reflective GaN PIN diode switches use SMA connectors at 50 Ohm. This SMA PIN diode Reflective switches have a minimum frequency of DC …

Mar 24, 2021 · One major issue with vertical GaN devices is that the properties of GaN substrates are inconsistent. Several of the defect types occur over long ranges and thus are not easily detected using localized techniques such as atomic force microscopy (AFM) or scanning electron microscopy (SEM).

May 19, 2024 · In this study, a vertical GaN PIN diode and a vertical PIN diode featuring an AlGaN (Al<4%) drift layer on a free-standing n-type GaN substrate were fabricated using metal-organic chemical vapor deposition (MOCVD).

After proton irradiation, the vertical GaN PiN diode can maintain a reverse blocking voltage higher than 1.7 kV, whereas the forward conduction performance has degraded with weakened conductivity modulation.

May 31, 2024 · Vertical gallium nitride (GaN) p–i–n (PIN) rectifiers have significant advantages in high-power electronic applications because of their low ON-state resistance, 1 avalanche capability, 2 high current handling capability, and larger breakdown voltages.

Dec 17, 2021 · We report low-frequency noise characteristics of vertical GaN PIN diodes, focusing on the effects of the diode design, current, and temperature. The as-grown and regrown diodes, with and without surface treatment, have been studied.

Abstract: Gallium nitride (GaN)-based power devices enable high power density and high switching frequency for power electronics systems. For the emerging vertical GaN devices, the electric field crowding around the edge of the main junction could result in premature breakdown.

Jun 9, 2022 · Using a GaN PIN diode switch technology, reverse biasing of the diode with large voltages ensures the switch is in the “OFF” state and operating at high current levels enables a much lower on-state resistance (RDS_on) while operating in the “ON” state, without the need to excessively stack devices.