Third generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO …

N-channel enhancement mode field-effect power transistor in a plastic envelope using ’trench’ technology. The IRF540 is supplied in the SOT78 (TO220AB) conventional leaded package. …

©2002 Fairchild Semiconductor Corporation IRF540N Rev. C IRF540N 33A, 100V, 0.040 Ohm, N-Channel, Power MOSFET Packaging Symbol Features • Ultra Low On-Resistance

100V Single N-Channel Power MOSFET in a TO-220 package.

IRF540. Power MOSFET. General Information: General Information. Useful Web Links. Markings: Part Marking Information. TO-220, I2PAK (TO-262), D2PAK (TO-263) (High Voltage) …

These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level …

Mar 9, 2025 · IRF540 STMicroelectronics MOSFETs MOSFET 100V .077 OHM M datasheet, inventory, & pricing.

Dec 8, 2017 · The IRF540N is an N-Channel Mosfet. This mosfet can drive loads upto 23A and can support peak current upto 110A. It also has a threshold voltage of 4V, which means it can …

Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.

Oct 13, 2020 · IRF540 is a power MOSFET designed to drive high current loads. It can handle maximum load of upto 23A and the maximum load voltage is upto 100V DC. It is using trench …