Vishay Siliconix Package Information Document Number: 71196 09-Jul-01 www.vishay.com 1 SOT-23 (TO-236): 3-LEAD b 1E 1 3 2 S e e1 D A 2 A1 C Seating Plane 0.10 mm 0.004"

Exceptional on-resistance and maximum DC current capability. We declare that the material of product compliance with RoHS requirements and Halogen Free. S-prefix for automotive and other applications requiring unique site and control change requirements; AEC-Q101 qualified and PPAP capable. 1.

SI2302 DOWO $0.0319 - 20V 3.3A 700mW 45mΩ@4.5V,3A 1.2V 1 N-channel SOT-23 MOSFETs ROHS datasheet, price, inventory C2988646

Pulse Test : Pulse Width < 300μs, Duty Cycle < 2%. Guaranteed By Design, Not Subject to Production Testing. Note : Adding "-HF" Suffix For Halogen Free, eg. Part Number-TP-HF.

Order Formosa Microsemi Co., Ltd. FMOS2302A1-Q1-H (3584-FMOS2302A1-Q1-HTR-ND) at DigiKey. Check stock and pricing, view product specifications, and order online.

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Description: N-Channel Enhancement Mode Field Effect Transistor. Manufacturer: Micro Commercial Components.

SI2302DS - Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only.

MCCSEMI.COM &XUYH &KDUDFWHULVWLFV 3/6 01 45 0 5 10 15 20 25 30 35 40 V GS =4.5V 4V 3.5V V GS =2.5V V GS =3V V GS =2V T A =25℃ V GS =1.5V Drain Current (A) 23 Drain To Source Voltage (V)

AS2302-Q1 AS-1150032 2003/03/08 2022/05/16 G 5 . Figure1. Output Characteristics Figure2. Transfer Characteristics Figure3. Capacitance Characteristics Figure4. Gate Charge Figure5. Drain-Source on Resistance Figure6. Drain-Source on Resistance ...